Infineon Technologies HYB25D256800BT-6 Memory Module - 256-Mbit Double Data Rate SDRAM

Quick Specs

Capacity	256 MB
Manufacturer	INFINEON TECHNOLOGIES
Memory Type	DDR SDRAM

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Product Features

• CAS Latency: (1.5), 2, 2.5, (3)
• Four internal banks for concurrent operation
• Bidirectional data strobe (DQS) is transmitted and received with data, to be used in capturing data at the receiver
• Auto Refresh and Self Refresh Modes
• Data mask (DM) for write data DLL aligns DQ and DQS transitions with CK transitions
• Differential clock inputs (CK and CK)
• 2.5V (SSTL_2 compatible) I/O
• DQS is edge-aligned with data for reads and is center-aligned with data for writes
• Burst Lengths: 2, 4, or 8
• Auto Precharge option for each burst access
• Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS
• Interval (8K refresh)
• VDDQ = 2.5V ± 0.2V / VDD = 2.5V ± 0.2V
• Double data rate architecture: two data transfers per clock cycle
• 7.8
  s Maximum Average Periodic Refresh
• TSOP66 package
• 60 balls BGA w/ 3 depop rows (“chipsize package”) 12 mm x 8 mm.